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Preliminary
RF2363
DUAL-BAND 3V LOW NOISE AMPLIFIER
4
Typical Applications
* GSM/DCS Dual-Band Handsets * Cellular/PCS Dual-Band Handsets
* General Purpose Amplification * Commercial and Consumer Systems
Product Description
The RF2363 is a dual-band Low Noise Amplifier designed for use as a front-end for 950MHz GSM/ 1850MHz DCS applications and may be used for dualband cellular/PCS applications. The 900MHz LNA is a single-stage amplifier; the 1900MHz LNA is a 2-stage amplifier. The part may also be tuned for applications in other frequency bands. The device has an excellent combination of low noise figure and high linearity at a very low supply current. It is packaged in a very small industry standard SOT 8-lead plastic package.
1.59 1.61 0.365 0.15 0.05
4
GENERAL PURPOSE AMPLIFIERS
0.127
TEXT*
2.80 3.00
0.650 2.60 3.00 3MAX 0MIN 1.44 1.04
*When Pin 1 is in upper left, text reads downward (as shown).
0.35 0.55
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS
u
Package Style: SOT, 8-Lead
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features
* Low Noise and High Intercept Point * 18dB Gain at 900MHz * 21dB Gain at 1900MHz
RF OUT1 GND RF OUT2 EN1
1 2 3 4
8 7 6 5
RF IN1 GND RF IN2 EN2
* Low Supply Current * Single 2.5V to 5.0V Power Supply * Very Small SOT-23-8 Plastic Package
Ordering Information
RF2363 RF2363 PCBA Dual-Band 3V Low Noise Amplifier Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev B2 010129
4-199
RF2363
Absolute Maximum Ratings Parameter
Supply Voltage Input RF Level Operating Ambient Temperature Storage Temperature
Preliminary
Rating
-0.5 to +6.0 +10 -40 to +85 -40 to +150
Unit
VDC dBm C C Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Overall
Specification Min. Typ. Max.
800 to 1000 1800 to 2000
Unit
MHz MHz
Condition
4
GENERAL PURPOSE AMPLIFIERS
RF Frequency Range
950MHz Performance
Gain Isolation Gain Step Noise Figure Output IP3 Input P1dB Reverse Isolation Input VSWR Output VSWR 16 18 16 34 1.3 +24 -10 20 1.8:1 1.8:1 20 dB dB dB dB dBm dBm dB
T = 25C, RF=950MHz, VCC =2.8V, EN1=2.8V, EN2=0V EN1=0V Gain - Isolation
+17
2:1 2:1
1850MHz Performance
Gain Isolation Gain Step Noise Figure Output IP3 Input P1dB Reverse Isolation Input VSWR Output VSWR 20 21.5 10 31.5 1.4 +22 -12 30 1.7:1 1.7:1 24 dB dB dB dB dBm dBm dB
No external matching With external match as per GSM/DCS Application Schematic T = 25C, RF=1850MHz, VCC =2.8V, EN2=2.8V, EN1=0V EN2=0V Gain - Isolation
+16
2:1 2:1
No external matching With external match as per GSM/DCS Application Schematic V V V V mA mA T = 25 C Specifications Operating limits 900MHz LNA Enabled, 1900MHz LNA Disabled; total DC current 1900MHz LNA Enabled, 900MHz LNA Disabled; total DC current EN1=EN2=0V
LNA Select
"Enable" Voltage "Disable" Voltage VCC 0 2.8 2.5 to 5.0 5 7.5 1
Power Supply
Voltage Current Consumption
A
4-200
Rev B2 010129
Preliminary
Pin 1 Function RF OUT1 Description
RF output pin for ~900MHz LNA. This pin is an open-collector output. It must be biased to either VCC or pin 4 through a choke or matching inductor. It is typically matched to 50 with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics. Ground connection. NOTE: Ground traces on pins 2 and 7 are equivalent to a small amount of inductance (~0.75nH). The dimensions of these lines are as follows. Pin 2: L=56mils, W =15mils, H=31mils Pin 7: L=56mils, W =15mils, H=31mils Dielectric is FR-4. RF output pin for ~1900MHz LNA. This pin is an open-collector output. It must be biased to either VCC or pin 4 through a choke or matching inductor. It is typically matched to 50 with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics. Enable pin for ~900MHz LNA. A voltage equal to the supply voltage LNA. This pin should be disabled (0V) when the ~1900MHz LNA is in use. Enable pin for ~1900MHz LNA. A voltage equal to the supply voltage LNA. This pin should be disabled (0V) when the ~900MHz LNA is in use. See package drawing for description of pin orientation. RF input pin for ~1900MHz. This pin is matched to approximately 50 at DCS/PCS frequencies. An external AC coupling capacitor is required at this pin. Same as pin 2. RF input pin for ~900MHz. This pin is matched to approximately 50 at GSM/Cellular frequencies. An external AC coupling capacitor is required at this pin.
RF2363
Interface Schematic
RF OUT1 RF IN1
To Bias Circuits
2
GND
LNA1
LNA2
Pin 2 Pin 7
3
RF OUT2
EN2 RF OUT2 RF IN2
4
GENERAL PURPOSE AMPLIFIERS
4 5 6 7 8
EN1 EN2 RF IN2 GND RF IN1
See pin 3.
See pin 3.
See pin 2. See pin 1.
Rev B2 010129
4-201
RF2363
Preliminary
RF2363 Theory of Operation and Application Information
The RF2363 contains two independent low noise amplifiers which have been optimized for dual-band applications in the GSM (905MHz to 960MHz) and DCS (1805MHz to 1880MHz) frequency bands. Fabricated using heterojunction bipolar transistor (HBT) technology, the RF2363 delivers high linear gain at a very low noise figure and low power consumption. Internal temperature compensation keeps the gain tightly controlled over temperature extremes (typically less than 1dB of gain variation from -40C to +85C at 2.8V). A 50 input impedance allows the part to be connected to standard receiver front end filters without additional matching components. MODE CONTROL The RF2363 incorporates two enable pins (EN1 and EN2) for biasing the desired LNA according to the table below.
EN1 GND GND VCC EN2 GND VCC GND Mode Power Down 1900MHz LNA On 900MHz LNA On
4
GENERAL PURPOSE AMPLIFIERS
1900MHz LNA The 1900MHz LNA is implemented by two common emitter stages in cascade. The first stage is biased through an external inductor at the EN2 pin. This inductor also acts as an interstage match; a resistor in parallel with the inductor is recommended to 'de-Q' the inductor, thus providing a broader band interstage match. An external bias inductor from the output pin (RF OUT2) to VCC provides DC biasing for the second stage transistor and assists in matching the output impedance to the next receiver stage. Low and high frequency bypass capacitors should be used on the supply side of both the EN2 and RF OUT2 bias inductors. An AC coupling capacitor is required at the RF IN2 pin. LAYOUT CONSIDERATIONS To provide optimal balance of gain and linearity, a small amount of inductance is required in the ground traces of the PCB. The recommended inductance is between 0.5 and 1.0nH, with 0.75nH used on the Evaluation Board. Depending on the application, more gain with less linearity or more linearity with less gain may be desired. Appropriate adjustment of the ground inductance can accomplish these objectives. Minimizing the ground inductance will maximize the gain at the expense of linearity while increasing the ground inductance will increase the linearity at the expense of gain. It is important to remember that the pin 7 ground inductance affects the performance of both LNAs, while the pin 2 ground inductance affects only the 1900MHz LNA.
900MHz LNA The 900MHz LNA is a single-stage, common emitter amplifier. Since the input pin contains a DC bias, an AC coupling capacitor is required at this pin. An external bias inductor from the output pin (RF OUT1) to VCC provides DC biasing for the amplifier transistor and assists in matching the output impedance to the next receiver stage. A capacitor having a good RF bypass characteristic at the frequency of operation should be placed as close as possible to the supply voltage side of the bias inductor; a low frequency bypass capacitor should also be included. The EN1 pin supplies VCC to the bias circuits of the LNA and should also be effectively bypassed with both low and high frequency capacitors.
4-202
Rev B2 010129
Preliminary
Application Schematic (GSM/DCS)
EN1 10 nF EN2 10 nF 47 pF 1 k 3.9 nH 5 22 nF RF IN2 6 7 22 nF RF IN1 8 1 12 nH Note orientation of package in this schematic. 100 pF 10 nF VCC 3 1 pF 2 2 pF 4 3.3 nH 100 pF 47 pF
RF2363
10 nF
VCC RF OUT2
4
RF OUT1
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P2 P2-1 1 2 CON2 Note orientation of package in this schematic. EN1 C9 10 nF EN2 C12 10 nF C11 47 pF R1 1 k L1 3.9 nH C1 22 nF 0.75 nH 7 J4 RF IN1 50 strip 8 C2 22 nF 1 L3 12 nH C5 2 pF VCC 2 50 strip J1 RF OUT1 5 6 U1 4 3 0.75 nH L2 3.3 nH C10 100 pF C7 47 pF C8 10 nF VCC C6 1 pF 50 strip VCC GND P1-3 P1-4 P1-1 P1 1 2 3 4 CON4 EN2 GND EN1 VCC
J3 RF IN2
50 strip
J2 RF OUT2
Notes: Ground traces on pins 2 and 7 are equivalent to a small amount of inductance (-1 nH). The dimensions of these lines are as follows. Pin 2: L = 56 mils, W = 15 mils, H = 31 mils Pin 7: L = 56 mils, W = 15 mils, H = 31 mils Dielectric is FR-4
C3 100 pF
C4 10 nF
Rev B2 010129
4-203
GENERAL PURPOSE AMPLIFIERS
RF2363
Evaluation Board Layout Board Size 1.0" x 1.0"
Board Thickness 0.031", Board Material FR-4
Preliminary
4
GENERAL PURPOSE AMPLIFIERS
4-204
Rev B2 010129
Preliminary
Gain versus Frequency 900 MHz LNA
19.0 -40C, 2.8V -40C, 3.2V +25C, 2.8V +25C, 3.2V +85C, 2.8V +85C, 3.2V 23.0
RF2363
Gain versus Frequency 1900 MHz LNA
-40C, 2.8V -40C, 3.2V +25C, 2.8V +25C, 3.2V +85C, 2.8V +85C, 3.2V
18.8
22.5
18.6 22.0
Gain (dB)
18.4
Gain (dB)
21.5
18.2
21.0 18.0
4
930.0 935.0 940.0 945.0 950.0 955.0 960.0 20.0 1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0
17.6 925.0
Frequency (MHz)
Frequency (MHz)
Noise Figure versus Frequency 900 MHz LNA
1.5 2.8V 3.2V 1.4 1.9 1.8 1.7 2.0 2.8V 3.2V
Noise Figure versus Frequency 1900 MHz LNA
Noise Figure (dB)
1.3
Noise Figure (dB)
1.6 1.5 1.4 1.3
1.2
1.1
1.2 1.1
1.0 925.0
930.0
935.0
940.0
945.0
950.0
955.0
960.0
1.0 1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0
Frequency (MHz)
Frequency (MHz)
Input 1 dB Compression Point versus Frequency 900 MHz LNA
0.0 -1.0 -40C, 2.8V -40C, 3.2V +25C, 2.8V +25C, 3.2V +85C, 2.8V +85C, 3.2V -6.0 -7.0
Input 1 dB Compression Point versus Frequency 1900 MHz LNA
-40C, 2.8V -40C, 3.2V +25C, 2.8V +25C, 3.2V +85C, 2.8V +85C, 3.2V
Input Power at 1 dB Compression (dBm)
Input Power at 1 dB Compression (dBm)
-2.0 -3.0 -4.0 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0 -11.0 -12.0 -13.0 -14.0 -15.0 925.0
-8.0 -9.0 -10.0 -11.0 -12.0 -13.0 -14.0 -15.0 -16.0 -17.0
930.0
935.0
940.0
945.0
950.0
955.0
960.0
-18.0 1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0
Frequency (MHz)
Frequency (MHz)
Rev B2 010129
4-205
GENERAL PURPOSE AMPLIFIERS
17.8
20.5
RF2363
Output 3rd Order Intercept Point versus Frequency 900 MHz LNA
32.0 31.0 30.0 29.0 28.0 27.0 -40C, 2.8V -40C, 3.2V +25C, 2.8V +25C, 3.2V +85C, 2.8V +85C, 3.2V 30.0 29.0 28.0 27.0 26.0 25.0
Preliminary
Output 3rd Order Intercept Point versus Frequency 1900 MHz LNA
OIP3 (dBm)
26.0 25.0 24.0 23.0
OIP3 (dBm)
24.0 23.0 22.0 21.0 20.0 19.0 18.0 17.0 16.0 1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0 -40C, 2.8V -40C, 3.2V +25C, 2.8V +25C, 3.2V +85C, 2.8V +85C, 3.2V
4
GENERAL PURPOSE AMPLIFIERS
22.0 21.0 20.0 19.0 18.0 925.0
930.0
935.0
940.0
945.0
950.0
955.0
960.0
Frequency (MHz)
Frequency (MHz)
Current versus Supply Voltage 900 MHz LNA
12.0 11.0 10.0 9.0 900 LNA, -40C 900 LNA, +25C 900 LNA, +85C 12.0 11.0 14.0 13.0
Current versus Supply Voltage 1900 MHz LNA
1900 LNA, -40C 1900 LNA, +25C 1900 LNA, +85C
Current (mA)
8.0 7.0 6.0 5.0 4.0 3.0 2.0 2.5 2.7 2.9 3.1 3.3 3.5
Current (mA)
10.0 9.0 8.0 7.0 6.0 5.0 4.0 2.5 2.7 2.9 3.1 3.3 3.5
Supply Voltage (VDC)
Supply Voltage (VDC)
4-206
Rev B2 010129
Preliminary
900MHz LNA
1.0
0.6
RF2363
Swp Max 2.5GHz
2.0
0.
0.8
Input impedance
Output impedance
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
-0.2
.4 -0
0.5 MHz
.0 -2
-0. 6
Swp Min 0.5GHz
-0.8
1900MHz LNA
1.0
0.6
-1.0
Input impedance
Swp Max 2.5GHz
2.0
1850 MHz
1850 MHz
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
-0.2
. -0
4
-0. 6
.0 -2
Swp Min 0.5GHz
-0.8
Rev B2 010129
-1.0
-5.0
0.5 MHz
-10.0
-4. 0
-3 .0
0.
Output impedance
0.8
3.0
4.0
-5.0
950 MHz
0
-3 .0
5.0
10.0
4-207
GENERAL PURPOSE AMPLIFIERS
-10.0
-4.
4
4
3.0
4. 0
5.0
0.2
0.2
950 MHz
10.0
4
RF2363
Preliminary
4
GENERAL PURPOSE AMPLIFIERS
4-208
Rev B2 010129

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